Available for Import

Silicon high voltage high power channel DMOS transistors and modules 2P829B

High-Power Transistors

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Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

Silicon high-voltage high-power channel DMOS-transistors and modules 2P829A

Description

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

Specifications

Initial drain current 0.001 A

Gate leakage current 1.0E-7 A

Drain-to-source resistance in open state 0.15 ohm

Threshold voltage 2...4 V

Switch-on delay time 60

Rise time 55

Shutdown delay time 220

Decline time SBVVBG

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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