
AnDM200EA17M power module
Manufacturer:
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
AnDM200EA17M power module
Specifications
Configuration type
half-bridge
Housing type
mpk-34
Maximum permissible current
200 A
Maximum allowable voltage
1700 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Special purpose transistor optocouples 3OT127B
View Details
Silicon epitaxial-planar N-P-N high-power high-voltage switching transistor of KT8143F type
View Details
Powerful NPN special purpose amplifying transistors 2T808A-2
View Details
Transistor KT3187B9
View Details
High-voltage bipolar high-current transistors 2T8143F1
View Details
Powerful microwave transistor on the basis of gallium nitride PP9170A
View Details
Transistor 2T117B OSM
View Details
High-power DMOS field-effect transistors 2P7246A91
View Details
CMOS N-channel transistor AnB3N120
View Details
High-voltage high-power n-channel DMOS transistor KP7154BS
View Details
AnM100HBA12M power module
View Details
High-power high-voltage field-effect transistor KP829D
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions