
AnDM200CA12M power module
Manufacturer:
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Seal module AnDM200CA12M
Specifications
Configuration type
half-bridge
Housing type
mpk-34
Maximum permissible current
200 A
Maximum allowable voltage
1200 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Powerful linear LDMOS transistor KP9171A
View Details
Special purpose transistor optocouples 3OT127B
View Details
Transistor KT879A
View Details
Travelling wave lamp "Lotto Man"
View Details
AOT110B transistor optocoupler, (with local gold-plating of the leg)
View Details
Powerful microwave transistor on the basis of gallium nitride PP9139A1
View Details
Transistor MIK8205
View Details
High-power DMOS field-effect transistors 2P7246A91
View Details
Powerful microwave transistor on the basis of gallium nitride PP9139B1
View Details
Power IGBT module AnM200RCB065M
View Details
Silicon high voltage high power channel DMOS transistors and modules 2P829G
View Details
High-power DMOS field-effect transistors 2P7242A-4
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions