VACUUM UNIT FOR REACTIVE-ION ETCHING OF LAYERS WITH SLUICE LOADING FROM CASSETTE TO CASSETTE PLASMA TM 8

Individual processing of wafers Ø 76, 100, 150mm on the work table in one technological cycle; Sluice chamber for loading - unloading of wafers from cassette to cassette; Manipulator-based transport system for wafer transfer from the lock chamber to the working chamber; Measurement of RF displacement on RF electrode - wafer holder in the range from 0 to 1000V; Working gases: Cl, BCl?, He and others; Etching speed Al 3000 - 5000 Å per minute; Consumption power not more than 12 kW; Regulation and automatic maintenance of the RF power level of the substrate electrode in the range of 50-400 W; Oil-free pumping system; Possibility to build in a clean room.