Available for Import

Transistor KT809A

High-Power Transistors

Manufacturer:

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

Transistor KT908A Transistor KT808A High-power NPN special-purpose amplifying transistors 2T803A Transistor KT803A High-power NPN special-purpose amplifying transistors 2T809A OSM

Powerful NPN special purpose amplifying transistors 2T808A OSM Powerful NPN special purpose amplifying transistors 2T908A

Description

Silicon mesa-planar structure n-p-n switching transistor in metal package, intended for use in switching and pulse devices

Specifications

Base-emitter saturation voltage

2.3 V

Collector-emitter saturation voltage

1.5 V

Emitter reverse current

0.05 A

Collector-emitter reverse current

0.003 A

Static current transfer coefficient in the common emitter circuit

15-100

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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