
High-power NPN special-purpose amplifying transistors 2T803A
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon mesaplanar n-p-n power transistor in metal-glass case, intended for use in circuits of stabilised power supplies, amplifiers of special-purpose equipment
Specifications
Collector-emitter saturation voltage
2.5 V
Emitter reverse current
0.02 A
Collector-emitter reverse current
0.005 A
Static current transfer coefficient
18-80
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