Available for Import
Transistor 3N20
Manufacturer:
MICRON OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
N-channel power field-effect transistor, manufactured by Trench MOSFET technology on 200mm diameter wafers
Specifications
Drain-to-source voltage
20 V
Gate-source voltage
B1/B8 2100/900 MHz V
Operating temperature range
50...150 °C
Storage temperature range
50...150 °C
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power DMOS Transistors 2P7242A-4
View DetailsHigh-Power GaN Microwave Transistors PП9136A
View DetailsTransistor Optocoupler AOT110B with Local Gold-Plated Pins
View DetailsBipolar Transistor 1NT251 for Switching Devices I93.456.000TU
View DetailsPowerful NPN Transistor 2T808A for Special Applications
View DetailsN-Channel MOSFET Transistor An10N70S10
View DetailsTransistor Optocoupler Special Purpose 3OT123A9 OSM
View DetailsPower Wrenches K3003KI014
View DetailsPowerful GaN Microwave Transistor for Amplification PP9137A
View DetailsHigh-Power DMOS Transistors 2P7246A-5
View DetailsHigh-Power GaN Microwave Transistor PP9138B
View DetailsPower Switches K3003KI014A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions