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Transistor 4N20
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Available Models
Description
Twin N-channel power field-effect transistor, manufactured using Trench MOSFET technology on 200mm diameter wafers
Specifications
Drain-to-source voltage
20 V
Gate-source voltage
B1/B8 2100/900 MHz V
Operating temperature range
50...150 °C
Storage temperature range
50...150 °C
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Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
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