Available for Import
Transistor 4N20
Manufacturer:
MICRON OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Twin N-channel power field-effect transistor, manufactured using Trench MOSFET technology on 200mm diameter wafers
Specifications
Drain-to-source voltage
20 V
Gate-source voltage
B1/B8 2100/900 MHz V
Operating temperature range
50...150 °C
Storage temperature range
50...150 °C
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful GaN-based Microwave Transistor PP9170G
View Details
High-Power DMOS Transistors 2P7242A-4
View Details
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View Details
Silicon Epitaxial-Planar Microwave Transistor KT6131A
View Details
High-Power NPN Switching Transistor 2T867A for Special Applications
View Details
High-Power NPN Transistors for Special Applications 2T968A-5
View Details
High-Power High-Voltage Field Transistor KP829Zh
View Details
High-Power GaN Microwave Transistor PP9138B
View Details
Compact NPN Bipolar Transistor KT665A9 for Surface Mount
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J
View Details
High Voltage Bipolar Power Transistor 2T8144VM1
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions