Available for Import
Transistor 4N20
Manufacturer:
MICRON OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Twin N-channel power field-effect transistor, manufactured using Trench MOSFET technology on 200mm diameter wafers
Specifications
Drain-to-source voltage
20 V
Gate-source voltage
B1/B8 2100/900 MHz V
Operating temperature range
50...150 °C
Storage temperature range
50...150 °C
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power GaN Microwave Transistor PP9138A
View Details
High Voltage Bipolar Power Transistors 2T8144BM1
View Details
Powerful Linear LDMOS Transistor KP9171A
View Details
Power IGBT Module AnM200RCB065M
View Details
High-Power High-Voltage Field Transistor KP829Zh
View Details
Transistor Optocoupler AOT110B with Local Gold-Plated Pins
View Details
High-Frequency Pulse Transistor 2T606A for Specialized Applications
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829B
View Details
LDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View Details
Powerful N-Channel DMOP Transistors 2P7246A91
View Details
Power IGBT Module AnM100RCA065M
View Details
N-Channel MOSFET Transistor AnB12N20
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions