Available for Import
Silicon high voltage high power channel DMOS
Manufacturer:
NPP Iskra OJSC
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Description
Powerful high-voltage field-effect n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supplies, nodes and blocks of converters and other special-purpose equipment
Specifications
Initial drain current
0.001 A
Gate leakage current
1.0E-7 A
Drain-to-source resistance in open state
0.15 ohm
Threshold voltage
2...4 V
Switch-on delay time
60
Rise time
55
Shutdown delay time
220
Decline time
SBVVBG
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