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Silicon high voltage high power channel DMOS

High-Power Transistors

Manufacturer: NPP Iskra OJSC

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Bulk pricing available

FOB, CIF & EXW terms available

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Available Models

High Voltage Power N-Channel DMOS Transistors and Modules 2P829G9 Silicon high-voltage high-power channel DMOS-transistors and modules 2P829A9

Description

Powerful high-voltage field-effect n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supplies, nodes and blocks of converters and other special-purpose equipment

Specifications

Initial drain current

0.001 A

Gate leakage current

1.0E-7 A

Drain-to-source resistance in open state

0.15 ohm

Threshold voltage

2...4 V

Switch-on delay time

Rise time

Shutdown delay time

220

Decline time

SBVVBG

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Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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Silicon high voltage high power channel DMOS

Available Models

Description

Specifications

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