Available for Import

High-power DMOS field-effect transistors 2P7246A-4

High-Power Transistors

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Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

High-power DMOS field-effect transistors 2P7246A-5 High-power DMOS field-effect transistors 2P7244A91 High-power field-effect DMOS transistors 2P7243A-5 High-power DMOS field-effect transistors 2P7244A9 High-power DMOS field-effect transistors 2P7243A91

High-power DMOS field-effect transistors 2P7245A91 High-power DMOS field-effect transistors 2P7242A91 Powerful field-effect DMOS transistors 2P7242A-5 High-power DMOS field-effect transistors 2P7246A9 High-power DMOS field-effect transistors 2P7242A9 High-power DMOS field-effect transistors 2P7245A-5 High-power DMOS field-effect transistors 2P7245A9

Description

Boxless high-power silicon planar field diodes with n-type channel, with rigid leads on crystal holder, intended for operation as part of hybrid integrated circuits (ICs) in modules, microassemblies and blocks of secondary power supplies of special-purpose equipment

Specifications

Maximum allowable DC drain-to-source voltage

60 V

Maximum permissible DC drain current

Flat grinder, Specialised grinder A

Drain-to-source resistance in open state

0.0135 ohm

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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