
High-power DMOS field-effect transistors 2P7244A9
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Powerful silicon planar field-effect with n-type channel in small-sized metal-ceramic packages designed for use in special-purpose equipment.
Specifications
Maximum allowable DC drain-to-source voltage
400 V
Maximum permissible DC drain current
5.5 A
Drain-to-source resistance in open state
1 ohm
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