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AOT123E transistor optocoupler with local gold-plated
Manufacturer:
NPP Iskra OJSC
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Description
Optocouples transistor in a metollosteel case, consisting of a silicon epitaxial-planar n-p-n transistor receiver and GaAlAs mesa-epitaxial infrared diode emitter, are intended for use in special purpose radio-electronic equipment for contactless switching of DC circuits with galvanic isolation between input and output.
Specifications
Input voltage
1.8 V
Output residual voltage
0.2 V
Output leakage current
1.0E-5 A
Insulation resistance
1000000000 ohm
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