Available for Import
Special purpose transistor optocouplers 3OT123G
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Optocouples transistor in a metollosteel case, consisting of a silicon epitaxial-planar n-p-n transistor receiver and GaAlAs mesa-epitaxial infrared diode emitter, are intended for use in special purpose radio-electronic equipment for contactless switching of DC circuits with galvanic isolation between input and output.
Specifications
Input voltage
2 V
Output residual voltage
0.5 V
Output leakage current
1.0E-5 A
Insulation resistance
1000000000 ohm
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Power Module MTKI-2000-25 for Industrial Applications
View DetailsWave Running Light "Lotoshnik
View DetailsPower IGBT Module AnM600SSC12M
View DetailsSpecial Purpose Thyristor Optocouplers 3OU186B
View DetailsHigh-Power IGBT Module AnM150HBEВ12M
View DetailsHigh Voltage Bipolar Power Transistors 2T8144BM1
View DetailsHigh-Frequency p-n-p Transistor 2T3108A/PK
View DetailsN-Channel MOSFET Transistor AnR40N20
View DetailsHigh-Power GaN Microwave Transistors PП9136A
View DetailsPowerful GaN Microwave Transistor for Amplifier Applications PP9170E
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829B
View DetailsPower IGBT Module AnM200RCB065M
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions