Transistors without diode in non-hermetic package AnS100IGB12

Available for Import

Transistors without diode in non-hermetic package AnS100IGB12

High-Power Transistors

Manufacturer:

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

Transistors and diodes in non-hermetic packages AnS75IGB065D AnSP150FRD04 power module Transistors and diodes in non-hermetic package AnS50IGB12D AnSA150FRD04 power module AnSA100FRD12 power module

Transistors without diode in non-hermetic package AnS75IGB12 CMOS N-channel transistor AnS200N08 AnSP75FRD17 power module Transistors without diode in non-hermetic package AnS100IGB065 Transistors and diodes in non-hermetic packages AnS150IGB065D AnSP100FRD12 power module AnSA100FRD04 power module Transistors and diodes in non-hermetic package AnS100IGB065D Transistors without diode in non-hermetic package AnS150IGB065 AnSP100FRD04 power module

Description

Diode-less transistors in non-hermetic package AnS100IGB12

Specifications

Housing type

SOT-227 (MPK-30)

Type of acceptance

QA

Maximum allowable voltage

1200 V

Maximum permissible current

100 A

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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