
AnSP150FRD04 power module
Manufacturer:
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon module AnSP150FRD04
Specifications
Configuration type
half-bridge
Housing type
SOT-227 (MPK-30)
Maximum permissible current
150 A
Maximum allowable voltage
400 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Powerful microwave transistor on the basis of gallium nitride PP9139A1
View Details
Transistor 2T368A/PK
View Details
Special purpose high frequency pulse transistors 2T603B/IU
View Details
Silicon epitaxial-planar N-P-N high-power high-voltage switching transistor of KT8143F type
View Details
CMOS P-channel transistor AnP53P03
View Details
Powerful microwave transistor on the basis of gallium nitride PP9170D
View Details
CMOS N-channel transistor AnS140N06
View Details
Transistor KT879A
View Details
High-frequency special-purpose field-effect transistors 2?301B/IU
View Details
High-power DMOS field-effect transistors 2P7246A-5
View Details
High voltage bipolar high current transistors 2T8143U
View Details
CMOS N-channel transistor AnR40N20
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions