
Transistor LDMOS Field Effect Microwave Transistor (pulse mode) L
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Available Models
Transistor Field Effect DMOS Microwave Continuous Mode Transistor P
Transistor LDMOS Field Effect Transistor LDMOS Microwave Continuous Mode Transistor P
Transistor Field Effect LDMOS Microwave Transistor (linear) P
Transistor Bipolar microwave transistor continuous mode transistor P
Transistor Field Effect DMOS Microwave Continuous Mode Transistor P
Description
Field LDMOS microwave transistor of pulse mode L - frequency range 2P9110B 1030-1550MHz JSC "NIIET" Russia
Specifications
Name
LDMOS microwave field-effect pulsed mode transistor L - frequency range
Designation
2P9110C
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