Available for Import
Silicon high voltage high power channel DMOS
Manufacturer:
NPP Iskra OJSC
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Description
Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.
Specifications
Initial drain current
0.0005 A
Gate leakage current
1.0E-7 A
Drain-to-source resistance in open state
0.005 ohm
Threshold voltage
2...4 V
Switch-on delay time
70
Rise time
125
Shutdown delay time
160
Decline time
65
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