Available for Import

Silicon high voltage high power channel DMOS transistors and modules 2P829E

High-Power Transistors

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Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

Silicon high voltage high power channel DMOS transistors and modules 2P829D Silicon high voltage high power channel DMOS transistors and modules 2P829G

Description

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

Specifications

Initial drain current 0.0005 A

Gate leakage current 1.0E-7 A

Drain-to-source resistance in open state 0.005 ohm

Threshold voltage 2...4 V

Switch-on delay time 70

Rise time 125

Shutdown delay time 160

Decline time 65

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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