Powerful NPN special purpose amplifying transistors 2T809A

Available for Import

Powerful NPN special purpose amplifying transistors 2T809A

High-Power Transistors

Manufacturer:

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

High-power NPN special-purpose amplifying transistors 2T808A Powerful NPN special purpose amplifying transistors 2T908A OSM High-power NPN special-purpose amplifying transistors 2T803A OSM

Description

Silicon mesaplanar n-p-n switching power transistor in metal case with insulators, intended for use in pulse circuits of special-purpose equipment.

Specifications

Collector-emitter reverse current

0.003 A

Emitter reverse current

0.05 A

Static current transfer coefficient in the common emitter circuit

15-100

Collector-emitter saturation voltage

1.5 V

Emitter-base saturation voltage

2.3 V

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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