Plasma Chemical Etching Vacuum System with ICP Source for Efficient Material Processing

Processing of plates in one technological cycle: 60x48 mm - 19 pcs, Ø 76 mm - 13 pcs, Ø 100 mm - 7 pcs, Ø 150 mm - 3 pieces, Ø 200 mm - 1 piece, Ø 300 mm - 1 piece; Sluice chamber for loading - unloading of substrates on the carrier from cassette to cassette; Transport system for transferring the substrates on the carrier from the airlock to the working chamber based on the manipulator arm. working chamber on the basis of manipulator; Reactor wall heating up to 60°C; Helium cooling and mechanical clamping of the carrier; Working gases: Cl?, HBr, SF?, CF?, CHF?, O?, Ar, He and others; Consumption power not more than 21 kW; Oil-free pumping system; Possibility to build in the clean room.