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Deep Anisotropic Etching Vacuum System MVU TM PLASMA 06 for Efficient Substrate Processing

Semiconductor Production Equipment

Manufacturer: NIITM OJSC

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FOB, CIF & EXW terms available

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Description

Individual substrate processing in one process cycle: Up to Ø 150 mm - 1 pc; Measurement of RF displacement on RF electrode - substrate holder in the range from 0 to 1000 V; Regulation and automatic maintenance of power level RF power level in the range from 30 to 200 W; Regulation and automatic maintenance of power level HF ICP plasma source in the range of 400 - 600 W; Working gases: Ar, SF?, C?F?; Oil-free pumping system; Microprocessor control system; Consumption power not more than 5.5 kW.

Specifications

Width

1450 mm

Length

800 mm

Height

1520 mm

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Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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Deep Anisotropic Etching Vacuum System MVU TM PLASMA 06 for Efficient Substrate Processing

Description

Specifications

Share your requirements for a quick response!