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Deep Anisotropic Etching Vacuum System MVU TM PLASMA 06 for Efficient Substrate Processing
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FOB, CIF & EXW terms available
Description
Individual substrate processing in one process cycle: Up to Ø 150 mm - 1 pc; Measurement of RF displacement on RF electrode - substrate holder in the range from 0 to 1000 V; Regulation and automatic maintenance of power level RF power level in the range from 30 to 200 W; Regulation and automatic maintenance of power level HF ICP plasma source in the range of 400 - 600 W; Working gases: Ar, SF?, C?F?; Oil-free pumping system; Microprocessor control system; Consumption power not more than 5.5 kW.
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