Individual processing of wafers Ø 76, 100, 150mm on the work table in one technological cycle;
Sluice chamber for loading - unloading of wafers from cassette to cassette;
Manipulator-based transport system for wafer transfer from the lock chamber to the working chamber;
Measurement of RF displacement on RF electrode - wafer holder in the range from 0 to 1000V;
Working gases: Cl, BCl?, He and others;
Etching speed Al 3000 - 5000 Å per minute;
Consumption power not more than 12 kW;
Regulation and automatic maintenance of the RF power level of the substrate electrode in the range of 50-400 W;
Oil-free pumping system;
Possibility to build in a clean room.
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