Plasma-Chemical Deposition Vacuum System with ICP Source for Thin Films - Izofaz TM 200-01

Purpose: The low-temperature plasma-stimulated atomic layer deposition unit is designed to form barrier and dielectric nanolayers, including high-k sub-gate ferroelectric and/or segmentoelectric dielectrics for operational non-volatile storage devices of FRAM (Ferroelectric Random Access Memory) type.

Technical parameters of the machine Maximum diameter of plates to be processed, mm200 Loading/unloading of wafers from cassette to cassettePresent Number of simultaneously processed products at ?200 mm, pcs.1 Maximum residual pressure in the working chamber (at closed airlock), Pa6*10-4 Working pressure in the chamber, Pa1 ÷ 200 Residual pressure in the distribution module, Pa8 Temperature of substrate holder, ?C25 ÷ 300 Number of gas lines with gas flow regulators, pcs.8 RF power supplied to the source of inductively coupled plasma (ICP), W0 ÷ 600 Frequency of RF signals supplied to the source of inductively coupled plasma (ICP), MHz13...