Plasma Chemical Deposition Vacuum System for Efficient Layer Processing

Processing of plates in one technological cycle: 60x48 mm - 19 pcs, Ø 76 mm - 13 pcs, Ø 100 mm - 7 pcs, Ø 150 mm - 3 pieces, Ø 200 mm - 1 piece, Ø 300 mm - 1 piece; Sluice chamber for loading - unloading of substrates on the carrier from cassette to cassette; Transport system for transferring the substrates on the carrier from the airlock chamber to the working chamber on the basis of manipulator; Working gases: SiH?, N?O, O?, N?, He and others; The deposition rate of SiO? layers is not less than 0.5 nm/s; Table heating up to 350°C; Consumption power not more than 21 kW; Oil-free pumping system; Possibility to build in a clean room.