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Plasma Etching Vacuum System with ICP Plasma Source TM 9 for Layer Processing
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FOB, CIF & EXW terms available
Description
Group or individual wafer processing in one technological cycle: 60x48 mm - 3 pcs; Ø 76, 100, 150 - 1 pc; HF electrode with substrate cooling; Etching speeds 0.5 - 1.5 µm/min; Measurement of RF displacement on RF electrode of substrate holder from 0 to 1000V; Regulation and automatic maintenance of RF ICP plasma source power level in the range of 400-600 W; Consumption power not more than 7 kW; Working gases: O?, SF?, C?F?, CHF? and others; Oil-free pumping system; Possibility to be built into the clean room.
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