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High-Power GaN Microwave Transistors PП9136A for Amplification Applications
Manufacturer:
NIIET OJSC
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Description
Powerful microwave transistors based on gallium nitride for use in amplifier stages, L-, S- and C-band frequencies. Due to small values of parasitic parameters they have increased performance characteristics. The use of transistors in final products will allow to achieve higher tactical and technical characteristics.
Specifications
Maximum current
1 A
Maximum voltage
130 V
Frequency range up to
6000
Output power
5 W
Transistor weight
1 year
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