Available for Import

Semiconductor module 2M410V

Induction Systems & Devices

Manufacturer:

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Email Inquiry

Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

Semiconductor module 2M410B1 Semiconductor module 2M410G

Description

Powerful silicon semiconductor modules in hybrid design on bipolar transistors with insulated gate and built-in anti-parallel BWDs, made on a single-key scheme (parallel key) in metal-ceramic cases with insulated flange; designed for use in power supply systems, converter equipment of secondary power supplies and electric drives, etc.

Specifications

Diode reverse recovery time 800

Output capacity 9.0E-10

Input capacity 1.0E-8

Shutdown time 800

Turn-on time 400

Constant forward voltage of the diode 2.5 V

Gate-emitter threshold voltage 2.5...6.5 V

Collector-emitter saturation voltage 2.8 V

Gate leakage current 5.0E-7 A

Collector-emitter reverse current 0.002 A

Save Your Time

Share your requirements for a quick response!

Looking for

Quantity

Your mobile

Instant response in 15 minutes

Best wholesale prices guaranteed

Direct from manufacturer

Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

Categories