Semiconductor module 2M410B1

Manufacturer:
Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Key Highlights

  • Made in Russia - engineered for durability
  • Suitable for challenging environments
  • Lower cost of ownership than European alternatives
  • Bulk orders available with volume discounts
  • Documentation and customs clearance assistance provided

Description

Powerful silicon semiconductor modules in hybrid design on bipolar transistors with insulated gate and built-in anti-parallel BWDs, made on a single-key scheme (parallel key) in metal-ceramic cases with insulated flange; designed for use in power supply systems, converter equipment of secondary power supplies and electric drives, etc.

Specifications

Diode reverse recovery time 800
Output capacity 5.0E-10
Input capacity 6.0E-9
Shutdown time 800
Turn-on time 400
Constant forward voltage of the diode 2.5 V
Gate-emitter threshold voltage 2.5...6.5 V
Collector-emitter saturation voltage 2.8 V
Gate leakage current 0.5 A
Collector-emitter reverse current 0.002 A
Save Your Time

Share your requirements for a quick response!

Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer

Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

Similar Products You May Be Interested In

Verified Suppliers

All products are sourced directly from authorized Russian manufacturers

Quality Assurance

Products meet international quality standards with proper certification

Global Shipping

Reliable logistics solutions to deliver products to your location

Secure Payments

Multiple secure payment options to facilitate international transactions

Your callback request has been received. We'll contact you shortly.