
Semiconductor module 2M410B1
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Available Models
Description
Powerful silicon semiconductor modules in hybrid design on bipolar transistors with insulated gate and built-in anti-parallel BWDs, made on a single-key scheme (parallel key) in metal-ceramic cases with insulated flange; designed for use in power supply systems, converter equipment of secondary power supplies and electric drives, etc.
Specifications
Diode reverse recovery time
800
Output capacity
5.0E-10
Input capacity
6.0E-9
Shutdown time
800
Turn-on time
400
Constant forward voltage of the diode
2.5 V
Gate-emitter threshold voltage
2.5...6.5 V
Collector-emitter saturation voltage
2.8 V
Gate leakage current
0.5 A
Collector-emitter reverse current
0.002 A
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Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
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