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High-Power Semiconductor Module 2M410G for Hybrid Applications

Induction Systems & Devices

Manufacturer:NPP Iskra OJSC

Price:Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

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Available Models

Semiconductor module 2M410V Semiconductor module 2M410B1

Description

Powerful silicon semiconductor modules in hybrid design on bipolar transistors with insulated gate and integrated anti-parallel BWDs, made on a single-key circuit (parallel key) in metal-ceramic cases with insulated flange; designed for use in power supply systems, converter equipment of secondary power supplies and electric drives, etc.

Specifications

Diode reverse recovery time

800

Output capacity

5.0E-10

Input capacity

6.0E-9

Shutdown time

800

Turn-on time

400

Constant forward voltage of the diode

2.5 V

Gate-emitter threshold voltage

2.5...6.5 V

Collector-emitter saturation voltage

2.8 V

Gate leakage current

5.0E-7 A

Collector-emitter reverse current

0.0015 A

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Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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High-Power Semiconductor Module 2M410G for Hybrid Applications

Available Models

Description

Specifications

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