Available for Import

Powerful microwave gallium nitride transistor KP9169AS

High-Power Transistors

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Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Available Models

Powerful microwave transistor on the basis of gallium nitride PP9139B1

Description

Powerful microwave transistor on the basis of gallium nitride for application in amplifying stages, L-, S- and C-band frequencies. Due to the small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers

Specifications

Frequency range

1200...1400

Maximum operating temperature

125 °C

Transistor weight

18 g

Output power

250 W

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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