Available for Import
Power IGBT module AnM75RCA17M
Manufacturer:
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Available Models
Description
Silicon IGBT module AnM75RCA17M
Specifications
Housing type
mpk-34
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
75 A
Recovery time
180
Configuration type
Top level key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful microwave transistor on the basis of gallium nitride PP9170D
View Details
Transistor KP7154BS
View Details
Silicon high-voltage high-power channel DMOS-transistors and modules 2P829A
View Details
AnM450HBE12M Power IGBT Module
View Details
AOT110B transistor optocoupler, (with local gold-plating of the leg)
View Details
Power module MTKI-2000-25
View Details
Powerful microwave transistor on the basis of gallium nitride PP9170E
View Details
Field transistor 2P527A9
View Details
Silicon p-n-p transistor KT234V9
View Details
Power IGBT module AnM100RCA065M
View Details
AnDM100AD17M power module
View Details
Powerful linear LDMOS transistor KP9171BS
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions