Available for Import
High-voltage bipolar high-current transistors 2T8144BM
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Silicon planar n-p-n high power high voltage switching transistors.
Specifications
Collector-emitter boundary voltage
400 V
Collector-base voltage
600 V
Collector-emitter saturation voltage
1.2 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
N-Channel MOSFET Transistor AnB3N120 for Efficient Switching
View Details
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View Details
Continuous Mode DMOS RF Transistor P - 2P979B, 230MHz
View Details
Non-Hermetic Transistors and Diodes AnR30IGB065D
View Details
Powerful GaN-based Microwave Transistor PP9139B1
View Details
Special Purpose Transistor Optocoupler 3OT127A
View Details
Power Module AnDM200EA12M - Efficient Energy Control
View Details
Silicon Epitaxial-Planar Transistor for Radio Engineering KT3187B9
View Details
Powerful NPN Switching Transistor 2T808A-2 for Special Applications
View Details
High Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
View Details
N-Channel MOSFET Transistor AnB12N20
View Details
Powerful High-Voltage N-P-N Switching Transistor KT8143F
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions