Available for Import
High-voltage bipolar high-current transistors 2T8144BM
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Silicon planar n-p-n high power high voltage switching transistors.
Specifications
Collector-emitter boundary voltage
400 V
Collector-base voltage
600 V
Collector-emitter saturation voltage
1.2 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful GaN-based Microwave Transistor PP9139B1
View DetailsHigh-Voltage Bipolar Power Transistors 2T8143F1
View DetailsWave Running Light "Lotoshnik
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829A
View DetailsField-effect P-Channel Transistor 2P527A9
View DetailsHigh Voltage N-Channel DMOS Transistor KP7154BS
View DetailsN-Channel MOSFET Transistor AnB3N120 for Efficient Switching
View DetailsPowerful Linear LDMOS Transistor KP9171A
View DetailsHigh-Frequency Pulse Transistor 2T606A for Specialized Applications
View DetailsHigh Voltage Field Transistor KP829A9
View DetailsPower Module AnS150FRD065 for Industrial Applications
View DetailsDMOП P-Channel Transistor AnP53P03
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions