Available for Import
High-voltage bipolar high-current transistors 2T8144BM
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Silicon planar n-p-n high power high voltage switching transistors.
Specifications
Collector-emitter boundary voltage
400 V
Collector-base voltage
600 V
Collector-emitter saturation voltage
1.2 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View DetailsSilicon Epitaxial-Planar Microwave Transistor KT6131A
View DetailsN-Channel MOSFET Transistor AnR40N20
View DetailsCompact NPN Bipolar Transistor KT665A9 for Surface Mount
View DetailsHigh Voltage Bipolar Power Transistor 2T8144VM1
View DetailsContinuous Mode DMOS RF Transistor P - 2P979B, 230MHz
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View DetailsField-effect P-Channel Transistor 2P527A9
View DetailsPowerful NPN Amplifying Transistors Special Purpose 2T908A-2
View DetailsPowerful N-Channel DMOP Transistors 2P7246A91
View DetailsHigh-Power NPN Transistors for Special Applications 2T968A-5
View DetailsHigh-Voltage Bipolar Power Transistors 2T8143F1
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions