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High-frequency special-purpose field-effect transistors 2?301B/IU
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon planar field-effect transistors with isolated gate, with induced p-channel, designed for operation in circuits of special-purpose equipment.
Specifications
Steepness of characteristic
1 mA/V
Initial drain current
5.0E-7 A
Threshold current
0.0005 A
Gate leakage current
3.0E-10 A
Noise figure
5
Threshold voltage
2.7 V
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