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High-power field-effect switching transistors for special purpose 2?7152?
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
Silicon high-current n-channel field-effect transistors in ceramic-metal insulated package, intended for use in radio-electronic equipment.
Specifications
Initial drain current
5.0E-6 A
Gate leakage current
1.0E-7 A
Drain-to-source resistance in open state
0.012 ohm
Threshold voltage gate - source
2...4 V
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