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GaN Microwave Transistor up to 6 GHz, SVC0102 for High-Power Applications
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Description
The microwave transistor with 7 mm periphery and 24 W output power is manufactured according to PN05D technology of Svetlana-Rost JSC. Main parameters: Frequency range: 0 - 6 GHz; Output power (P 3dB ): 24 W at 3 GHz; Gain in linear mode: 14 dB; Operating voltage: 28 V; Overall dimensions: 1710 x 950 x 100 µm. The transistor is supplied as a crystal. The sources are commutated through holes with a backside metallisation.
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