The microwave transistor with 7 mm periphery and 24 W output power is manufactured according to PN05D technology of Svetlana-Rost JSC.
Main parameters:
Frequency range: 0 - 6 GHz;
Output power (P 3dB ): 24 W at 3 GHz;
Gain in linear mode: 14 dB;
Operating voltage: 28 V;
Overall dimensions: 1710 x 950 x 100 µm.
The transistor is supplied as a crystal. The sources are commutated through holes with a
backside metallisation.
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