
CMOS N-channel transistor AnD29N10
Manufacturer:
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Description
DMOS N-channel transistor AnD29N10
Specifications
Housing type
TO-252 (KT-89)
Type of acceptance
QA
Maximum allowable voltage
100 V
Maximum permissible current
29 A
Drain-to-source resistance in open state
0.03 ohm
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In

Transistors and diodes in non-hermetic packages AnS75IGB065D
View Details
Powerful microwave transistors based on gallium nitride PP9136A
View Details
Power IGBT module AnM75LCA12M
View Details
Power IGBT module AnM200RCB065M
View Details
High-power NPN special-purpose amplifying transistors 2T908A-2
View Details
Power keys K3003KI014A
View Details
AnDM100AD17M power module
View Details
High-voltage bipolar high-current transistors 2T8143F1
View Details
Powerful microwave transistor on the basis of gallium nitride PP9138A
View Details
Special purpose high frequency pulse transistors 2T603B/IU
View Details
High-power DMOS field-effect transistors 2P7246A91
View Details
High-power high-voltage field-effect transistor KP829D
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions