Available for Import

AOT123A transistor optocoupler (with local gold-plating of the leg)

High-Power Transistors

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Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Description

Optocouples transistor in a metollosteel case, consisting of a silicon epitaxial-planar n-p-n transistor receiver and GaAlAs mesa-epitaxial infrared diode emitter, are intended for use in special purpose radio-electronic equipment for contactless switching of DC circuits with galvanic isolation between input and output.

Specifications

Insulation resistance

1000000000 ohm

Output leakage current

1.0E-5 A

Output residual voltage

0.3 V

Input voltage

2 V

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Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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AOT123A transistor optocoupler (with local gold-plating of the leg)

Key Highlights

Description

Specifications

Share your requirements for a quick response!