
AOT123A transistor optocoupler (with full gold-plated leg)
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Available Models
AOT110B transistor optocoupler, (with local gold-plating of the leg)
AOT123B transistor optocoupler (with local gold-plating of the leg)
AOT110A transistor optocoupler (with full gold-plated leg)
AOT110A transistor optocoupler (with local gold-plated leg)
AOT110B transistor optocoupler (with local gold-plating of the leg)
Description
Optocouples transistor in a metollosteel case, consisting of a silicon epitaxial-planar n-p-n transistor receiver and GaAlAs mesa-epitaxial infrared diode emitter, are intended for use in special purpose radio-electronic equipment for contactless switching of DC circuits with galvanic isolation between input and output.
Specifications
Insulation resistance
1000000000 ohm
Output leakage current
1.0E-5 A
Output residual voltage
0.5 V
Input voltage
2 V
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