Pressure-Vacuum Microelectronic Transducers RTM, RTM-M for Accurate Measurements

Microelectronic transducers of overpressure-discharge RTM, RTM-M have optimal metrological and operational characteristics of transducers, such as stability, reproducibility and noise immunity of the output signal, achieved on the basis of the application of a sensitive element of monocrystalline silicon, located on a sapphire membrane and a specialised electronic circuit of a high degree of integration with digital signal processing. The high overload capacity of the transducers is achieved by using a double-layer sapphire-titanium membrane with monocrystalline silicon strain gauges ("silicon-on-sapphire technology"). The monocrystalline sapphire membrane is an ideal elastic element and, when combined with titanium, becomes a leader in terms of deformation. The high degree of reliability of the sensing element and electronic circuitry does not require correction of the output range during operation. <ul> <li>- digital correction n...</li> </ul>