
Power IGBT module AnM400SSC12M
Manufacturer:
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Available Models
Description
Silicon IGBT module AnM400SSC12M
Specifications
Housing type
MPK-62-2
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
400 A
Configuration type
Single key
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Contact Us
Contact Our Import Specialists
Similar Products You May Be Interested In

High-voltage bipolar high-current transistors 2T8144BM1
View Details
Field transistor 2P527A9
View Details
Powerful microwave transistor on the basis of gallium nitride PP9170B
View Details
High-power NPN special-purpose amplifying transistors 2T908A-2
View Details
Powerful microwave transistor on the basis of gallium nitride PP9170A
View Details
High-frequency special-purpose field-effect transistors 2?301B/IU
View Details
Silicon high-voltage high-power channel DMOS transistors and modules 2P829I9
View Details
AnM450HBE12M Power IGBT Module
View Details
Powerful microwave transistor on the basis of gallium nitride PP9170D
View Details
Powerful microwave transistor on the basis of gallium nitride PP9170G
View Details
Power module MTKI-2000-25
View Details
Transistor LDMOS Field Effect Microwave Transistor (pulse mode) L
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions