
AOT110B transistor optocoupler, (with local gold-plating of the leg)
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Key Highlights
- Made in Russia - engineered for durability
- Suitable for challenging environments
- Lower cost of ownership than European alternatives
- Bulk orders available with volume discounts
- Documentation and customs clearance assistance provided
Available Models
AOT123B transistor optocoupler (with local gold-plating of the leg)
AOT110A transistor optocoupler (with full gold-plated leg)
AOT123A transistor optocoupler (with full gold-plated leg)
AOT110A transistor optocoupler (with local gold-plated leg)
AOT110B transistor optocoupler (with local gold-plating of the leg)
Description
Optocouplers transistorised in a metal-glass case, consisting of silicon planarho n-p-n compound transistor receivers and mesa-epitaxial emitting diodes on the basis of GaAlAs, intended for switching DC circuits with galvanic isolation between input and output.
Specifications
Insulation resistance
1000000000 ohm
Output leakage current
0.0001 A
Output residual voltage
1.5 V
Input voltage
2 V
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