High Voltage Bipolar Power Transistors 2T8144BM1

High Voltage Bipolar Power Transistors 2T8144BM1

US$0.90-3.60
Collector-emitter boundary voltage: 450
Collector-base voltage: 600
NPP Iskra OJSC 🇷🇺
Non-Hermetic Transistors and Diodes AnR30IGB065D

Non-Hermetic Transistors and Diodes AnR30IGB065D

US$0.30-1.80
Housing type: TO-247 (KT-43V)
Housing type: TO-247 (KT-43V)
ANGSTREM OJSC 🇷🇺
High-Power Fast Recovery Diode KD664AS

High-Power Fast Recovery Diode KD664AS

US$0.06-0.60
Voltage Uobr.i.p: 1200
Voltage Upr.i: 2.35
NPP Iskra OJSC 🇷🇺
Multiplying Diode with Bar Leads A92220

Multiplying Diode with Bar Leads A92220

US$0.30-2.40
Total diode capacitance: 0.02...0.04
Frequency limit: 3000
SALUT OJSC 🇷🇺
Bipolar Transistor 1NT251 for Switching Devices I93.456.000TU

Bipolar Transistor 1NT251 for Switching Devices I93.456.000TU

US$0.06-0.60
Designation: 1NT251
Designation: 1NT251
INTEGRAL Experimental Plant OJSC 🇷🇺
High-Power NPN Transistors for Special Applications 2T968A-5

High-Power NPN Transistors for Special Applications 2T968A-5

US$0.30-1.80
Limit frequency of the current transfer coefficient: Flat grinder, Specialised grinder
Collector-emitter saturation voltage: 1
NPP Iskra OJSC 🇷🇺
Low Power Zener Diode 2C213J SM3.362.825TU

Low Power Zener Diode 2C213J SM3.362.825TU

US$0.03-0.24
Designation: 2C213J
Designation: 2C213J
INTEGRAL Experimental Plant OJSC 🇷🇺
Linear Mode LDMOS RF Transistor for Embedded Systems

Linear Mode LDMOS RF Transistor for Embedded Systems

US$900-3,600
Output power: 150
Operating frequency range: 860
NIIET OJSC 🇷🇺
Fast Recovery Diode DCh261-250х

Fast Recovery Diode DCh261-250х

US$0.09-0.60
Type: resilient
Type: resilient
PROTON-ELECTROTEX OJSC 🇷🇺
D161-250 Rectifier Diode for Electrical and Radioelectronic Devices

D161-250 Rectifier Diode for Electrical and Radioelectronic Devices

US$0.03-0.24
Type: rectifier
Type: rectifier
PROTON-ELECTROTEX OJSC 🇷🇺

Silicon Photodiode FD-265 for Visible and Near-IR Detection

US$0.60-6
Mark: FD-265
Mark: FD-265
SAPFIR OJSC 🇷🇺