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首页 / 电气与照明 / 电气元件 / 功率半导体器件(IGBT/MOSFET) / Powerful Semiconductor Module KM410B1
首页 电气与照明 电气元件 功率半导体器件(IGBT/MOSFET)
Powerful Semiconductor Module KM410B1

Powerful Semiconductor Module KM410B1 — NPP Iskra OJSC

品牌: ISKRA
¥648 - ¥2,592 CNY
MOQ: 20 pieces

主要特点

Power Rkmah: 350 W
Current IK max: 100 A
Voltage UKE max: 1200 V
Time t off, ns: 800

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产品描述

UKE max = 1200B; IK max =100A; Uke us 2.8V; RKmah=500W, 350W; t on=400ns; t off=800ns

规格参数

Power Rkmah
350 W
Current IK max
100 A
Voltage UKE max
1200 V
Time t off, ns
800
Time t on, ns
400
Voltage Uke us
2.8 V
类型
金属陶瓷外壳中的强IGBT模块
型号
KM410B1
用途
用于电力供应系统、变换器技术和为国民经济制造的其他广泛应用设备

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