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首页 / 电气与照明 / 电气元件 / 晶体管 / High Voltage Power N-Channel DMOS Transistors and Modules 2P829G9
首页 电气与照明 电气元件 晶体管
High Voltage Power N-Channel DMOS Transistors and Modules 2P829G9

High Voltage Power N-Channel DMOS Transistors and Modules 2P829G9 — NPP Iskra OJSC

¥43.20 - ¥432 CNY
MOQ: 100 pieces

主要特点

Initial drain current: 0.0005 A
Drain-to-source resistance in open state: 0.05 ohm
Switch-on delay time: 55
Gate leakage current: 1.0E-7 A

产品描述

Power field n-channel transistors of unified design in metal-ceramic packages, designed for use in modern and advanced secondary power supply sources, nodes and blocks of converters and other special purpose equipment.

规格参数

Initial drain current
0.0005 A
Drain-to-source resistance in open state
0.05 ohm
Switch-on delay time
55
Gate leakage current
1.0E-7 A
Threshold voltage
2...4 V
Rise time
SBVVBG
Shutdown delay time
170
Decline time
SBVVBG

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