The D series of high temperature microelectronic overpressure strain gauge transmitters are designed for proportional conversion of pressure into an electrical signal. New solutions in pressure measurement - Silicon on Sapphire technology.
The sensitive element of strain gauges is a two-layer sapphire-titanium membrane with monocrystalline silicon strain gauges. Monocrystalline sapphire membrane is an ideal elastic element and in combination with titanium it acquires the leading quality in terms of deformation level, retains elastic properties up to +400°?.
Monocrystalline silicon strain gauges are connected to sapphire at the atomic level (heteroepitaxy method) and work practically without hysteresis and fatigue phenomena in time. Unique insulating properties and radiation resistance of sapphire allow to operate the sensing element in the temperature range from -200 to +350°C, under high electromagnetic interference and radiation exposure.
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