Silicone Substrates for Radioelectronic Technology - High Performance Solutions

Glass

On request

Roughness of working surface Rz, ?m ? 0,032 Roughness of non-working surface Rz, ?m ? 4 Geometrical dimensions, mm60 (- 0,5) × 48 (- 0,3) × 0,6 (- 0,1) Density, g/cm³2,65 Dielectric constant (?) at frequency 1,0 MHz 8,± 0,5 Tangent

Designed for the manufacture of film hybrid microcircuits, miniature chip resistors, microacoustoelectronics. They are distinguished by a high degree of purity of the working surface - 0,024 microns (at existing analogues - 0,032 microns).