Radiation-Resistant 1657РУ1У Integrated Circuit (SRAM) for Onboard Equipment

Radiation-resistant chip 1657RU1U static synchronous CMOS SRAM (SRAM) with capacity of 4 Mbit with 512Kx8 organisation is intended for use in on-board equipment for various purposes. MAIN FEATURES: -fabrication technology: 250 nm CMOS; -memory type: static, asynchronous; -memory organisation: 512K×8; -address sampling time:?

typical 25 ns;? during and immediately after the WWF and radiation impact not more than 40 ns; -type power consumption: 80 mW; -power supply voltages: 2.5 V and 3.3 V; -temperature range: from -60 to +125 °?; -ceramic metal housing LCC-44, 16,5 x 16,5 mm; -atmospheric low operating pressure: 10-6 mm Hg; -microcircuit mass not more than 3,0 g; -microcircuit is resistant to static electricity with a potential of at least 1000 V; -case: LCC44, 16,5 x 16,5 mm, pin spacing 1,27 mm.