Available for Import

Plate with crystals of customised elements 2P7241A-5

High-Power Semiconductors

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Bulk pricing available

FOB, CIF & EXW terms available

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Key Highlights

Made in Russia - engineered for durability
Suitable for challenging environments
Lower cost of ownership than European alternatives
Bulk orders available with volume discounts
Documentation and customs clearance assistance provided

Description

The P-type 2P7241A-5 transistor is manufactured using Trench MOSFET technology on 200 mm wafers. It is intended for use in battery power management systems and portable devices.

Specifications

Drain-to-source voltage

30 V

Operating temperature range

-50...150 °C

Drain-to-source breakdown voltage

30 V

drain-to-source leakage current

1 µA

Gate-source leakage current

+/-100 nA

Gate threshold voltage

1.725 V

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Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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Plate with crystals of customised elements 2P7241A-5

Key Highlights

Description

Specifications

Share your requirements for a quick response!