High-Resolution CMOS Photodetector Chip from NII Television

Available for Import

High-Resolution CMOS Photodetector Chip for Advanced Imaging Applications

Electronic ICs

Manufacturer: Television Research Institute OJSC

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Bulk pricing available

FOB, CIF & EXW terms available

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Description

This electronic ics is manufactured in Russia and is available for import to global markets. Russian-made products are known for their durability, reliability, and excellent price-to-performance ratio.

For detailed product specifications, please see the Specifications tab. Contact our team to request pricing, availability, and shipping information.

Specifications

Dynamic light range

5000

More info

Silica substrate, ceramic housing, quartz glass in the housing. The photodetector is designed to convert an optical image of the visible range, focused by an external optical system, into an electrical signal, its conversion into a digital

Integral sensitivity

4 V/(lx*s)

Minimum time of full format frame output

10 ms

Name

High resolution photodetector CMOS VLSI

Size of photosensitive working floor

15.48 x 15.48 mm2

Size of photosensitive element

215,12 x 15,12 µm2

Output signal format

up to 4 outputs of 12 digits of parallel code.

Number of active pixels

1024x1024 pixels

Exposure of saturation at accumulation time 100 ms

Not less than (2 x 10-1) lux*s

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Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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High-Resolution CMOS Photodetector Chip for Advanced Imaging Applications

Description

Specifications

Share your requirements for a quick response!