High-Frequency GaN Transistor up to 6 GHz, SVC0101

Available for Import

High-Frequency GaN Transistor up to 6 GHz for Efficient Power Amplification

Microwave Tubes & Amplifiers

Manufacturer: Svetlana-Rost OJSC

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Email Inquiry

Description

The microwave transistor with 3.5 mm periphery of 18 W power is manufactured by PN05D technology of Svetlana-Rost JSC. Main parameters: Frequency range: 0 - 6 GHz; Output power (P 3dB ): 18 W at 3 GHz; Gain in linear mode: 14 dB; Operating voltage: 28 - 45 V; Overall dimensions: 1090 x 950 x 100 µm. The transistor is supplied as a crystal. The source is commutated through metallised through-holes to the backside metallisation.

Specifications

Output power at 3 GHz

18 W

Maximum operating frequency

Gain in linear mode

Operating voltage

28...45 V

Save Your Time

Share your requirements for a quick response!

Looking for

Quantity

Your mobile

Instant response in 15 minutes

Best wholesale prices guaranteed

Direct from manufacturer

Delivery & Payment

Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

Categories

Language

Quick Links

High-Frequency GaN Transistor up to 6 GHz for Efficient Power Amplification

Description

Specifications

Share your requirements for a quick response!